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Creators/Authors contains: "Vorobiov, Mykhailo"

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  1. ; ; ; ; ; (, physica status solidi (b))
    GaN samples were implanted with Be and F and annealed in different conditions to activate the BeGa acceptors. Photoluminescence spectra were studied to recognize the defects. The UVLBe band with a maximum at 3.38 eV and the YLBe band with a maximum at 2.15 eV were observed and associated with Be. The sequential implantation of Be and F ions into GaN at 600 °C reduces the concentration of nitrogen vacancies (VN), as evidenced by the lack of the green luminescence band associated with the isolated nitrogen vacancy. First‐principles calculations were employed to find parameters of defects that can form after implantation. 
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  2. ; ; ; ; ; ; ; (, physica status solidi (b))
    A systematic photoluminescence study of Be‐doped GaN grown by metal‐organic chemical vapor deposition is presented. All Be‐doped samples show the ultraviolet luminescence (UVLBe) band with a maximum at 3.38 eV and the yellow luminescence (YLBe) band with a maximum at ≈2.15 eV in GaN:Be having various concentrations of Be. The UVLBe band is attributed to the shallow state of the BeGa acceptor with a delocalized hole. The YLBe band is caused by a Be‐related defect, possibly the polaronic state of the BeGa acceptor with the charge transition level at 0.3 eV above the valence band. This broad band exhibits unusual properties. In particular, it always shows two steps in its thermal quenching. The second step at T ≈ 200 K is attributed to the emission of holes from the 0.3 eV level to the conduction band. The origin of the first step remains unexplained. 
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  3. ; ; ; (, Physical Review B)
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  4. ; ; ; ; ; ; ; ; (, ACS Applied Electronic Materials)
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  5. ; ; ; ; ; ; (, physica status solidi (b))
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